PBSS4350Z,135
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- Mfr.Part #
- PBSS4350Z,135
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 50V 3A SOT223
- Stock
- 269,512
- In Stock ：
- 269,512
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Emitter Base Voltage (VEBO) :
- 6V
- Base Part Number :
- PBSS4350
- Pin Count :
- 4
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 2W
- Frequency :
- 100MHz
- Mount :
- Surface Mount
- Power Dissipation :
- 2W
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 100MHz
- Terminal Position :
- Dual
- Case Connection :
- COLLECTOR
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 50V
- Collector Base Voltage (VCBO) :
- 60V
- Number of Pins :
- 3
- Number of Terminations :
- 4
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 100MHz
- Operating Temperature :
- 150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Published :
- 2001
- Collector Emitter Voltage (VCEO) :
- 50V
- Collector Emitter Saturation Voltage :
- 290mV
- JESD-30 Code :
- R-PDSO-G4
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Length :
- 6.7mm
- Packaging :
- Tape and Reel (TR)
- Max Breakdown Voltage :
- 50V
- Terminal Form :
- Gull wing
- Max Collector Current :
- 3A
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 290mV @ 200mA, 2A
- Weight :
- 4.535924g
- Width :
- 3.7mm
- Package / Case :
- TO-261-4, TO-261AA
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 4 Weeks
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Height :
- 1.7mm
- Datasheets
- PBSS4350Z,135
NPN 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
PBSS4350Z,135 Overview
In this device, the DC current gain is 100 @ 2A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 290mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 290mV @ 200mA, 2A.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 50V volts.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
PBSS4350Z,135 Features
the DC current gain for this device is 100 @ 2A 2V
a collector emitter saturation voltage of 290mV
the vce saturation(Max) is 290mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
PBSS4350Z,135 Applications
There are a lot of Nexperia USA Inc.
PBSS4350Z,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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