PBSS4350D,135
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- Mfr.Part #
- PBSS4350D,135
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- NOW NEXPERIA PBSS4350D - SMALL S
- Stock
- 251,317
- In Stock ：
- 251,317
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 750mW
- Collector Emitter Breakdown Voltage :
- 50V
- Max Collector Current :
- 3A
- Number of Pins :
- 6
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Published :
- 2007
- Package / Case :
- SC-74, SOT-457
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 6
- Vce Saturation (Max) @ Ib, Ic :
- 290mV @ 200mA, 2A
- Pin Count :
- 6
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 50V
- Base Part Number :
- PBSS4350
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 50V
- Transition Frequency :
- 100MHz
- Factory Lead Time :
- 4 Weeks
- Operating Temperature :
- 150°C TJ
- Terminal Position :
- Dual
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 750mW
- Emitter Base Voltage (VEBO) :
- 6V
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- 60V
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 100MHz
- Element Configuration :
- Single
- Datasheets
- PBSS4350D,135
NPN 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON NPN SC-74, SOT-457 Tape & Reel (TR) Surface Mount
PBSS4350D,135 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 2A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 290mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 100MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 3A volts.
PBSS4350D,135 Features
the DC current gain for this device is 100 @ 2A 2V
the vce saturation(Max) is 290mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
PBSS4350D,135 Applications
There are a lot of Nexperia USA Inc.
PBSS4350D,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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