PBSS4350D,125
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- Mfr.Part #
- PBSS4350D,125
- Manufacturer
- Nexperia
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- TRANS NPN 50V 3A 6TSOP
- Stock
- 2,865
- In Stock ：
- 2,865
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- hFE Min :
- 200
- Element Configuration :
- Single
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 50V
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 50V
- Lead Free :
- Lead Free
- Factory Lead Time :
- 4 Weeks
- Gain Bandwidth Product :
- 100MHz
- Transistor Type :
- NPN
- Package / Case :
- SC-74, SOT-457
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Published :
- 2009
- Base Part Number :
- PBSS4350
- Max Collector Current :
- 3A
- Frequency :
- 100MHz
- Power Dissipation :
- 750mW
- Max Power Dissipation :
- 750mW
- Pin Count :
- 6
- Operating Temperature :
- 150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 6
- Number of Pins :
- 6
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Terminal Form :
- Gull wing
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Base Voltage (VCBO) :
- 60V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 290mV @ 200mA, 2A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 50V
- Transition Frequency :
- 100MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- PBSS4350D,125
NPN 150°C TJ 100nA ICBO 1 Elements 6 Terminations SILICON NPN SC-74, SOT-457 Tape & Reel (TR) Surface Mount
PBSS4350D,125 Overview
DC current gain in this device equals 100 @ 2A 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 290mV @ 200mA, 2A.An emitter's base voltage can be kept at 6V to gain high efficiency.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 50V volts.In extreme cases, the collector current can be as low as 3A volts.
PBSS4350D,125 Features
the DC current gain for this device is 100 @ 2A 2V
the vce saturation(Max) is 290mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 100MHz
PBSS4350D,125 Applications
There are a lot of Nexperia USA Inc.
PBSS4350D,125 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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