PBSS4250X,135
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- Mfr.Part #
- PBSS4250X,135
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 50V 2A SOT89
- Stock
- 217,825
- In Stock ：
- 217,825
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 50V
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 50V
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- PBSS4250
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 200mA, 2A
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Tin (Sn)
- Frequency :
- 100MHz
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Number of Pins :
- 4
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 2009
- Max Breakdown Voltage :
- 50V
- Power Dissipation :
- 1W
- JESD-30 Code :
- R-PSSO-F3
- Operating Temperature :
- 150°C TJ
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 1W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 2A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1A 2V
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- TO-243AA
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Gain Bandwidth Product :
- 100MHz
- Current - Collector Cutoff (Max) :
- 100nA
- Factory Lead Time :
- 4 Weeks
- Terminal Form :
- Flat
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 50V
- JESD-609 Code :
- e3
- Transistor Type :
- NPN
- Case Connection :
- COLLECTOR
- Transition Frequency :
- 100MHz
- hFE Min :
- 300
- Datasheets
- PBSS4250X,135
SOT89.jpg)
NPN 150°C TJ 100nA 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
PBSS4250X,135 Overview
This device has a DC current gain of 300 @ 1A 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 320mV @ 200mA, 2A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 50V volts can be used.A maximum collector current of 2A volts is possible.
PBSS4250X,135 Features
the DC current gain for this device is 300 @ 1A 2V
the vce saturation(Max) is 320mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS4250X,135 Applications
There are a lot of Nexperia USA Inc.
PBSS4250X,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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