PBSS4240T,215
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- Mfr.Part #
- PBSS4240T,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 40V 2A TO236AB
- Stock
- 91,619
- In Stock ：
- 91,619
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Frequency :
- 230MHz
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Terminations :
- 3
- Base Part Number :
- PBSS4240
- Power Dissipation :
- 480mW
- Collector Base Voltage (VCBO) :
- 40V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Gain Bandwidth Product :
- 230MHz
- Mount :
- Surface Mount
- Max Breakdown Voltage :
- 40V
- Peak Reflow Temperature (Cel) :
- 260
- Length :
- 3mm
- Width :
- 1.4mm
- Published :
- 2001
- REACH SVHC :
- No SVHC
- Terminal Finish :
- Tin (Sn)
- Transition Frequency :
- 230MHz
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1A 2V
- Max Collector Current :
- 2A
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- Terminal Form :
- Gull wing
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 40V
- Collector Emitter Breakdown Voltage :
- 40V
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Factory Lead Time :
- 4 Weeks
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 320mV @ 200mA, 2A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Max Power Dissipation :
- 480mW
- Collector Emitter Saturation Voltage :
- 320mV
- Height :
- 1mm
- Datasheets
- PBSS4240T,215
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
PBSS4240T,215 Overview
In this device, the DC current gain is 300 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 320mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 320mV @ 200mA, 2A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 230MHz.Input voltage breakdown is available at 40V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
PBSS4240T,215 Features
the DC current gain for this device is 300 @ 1A 2V
a collector emitter saturation voltage of 320mV
the vce saturation(Max) is 320mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 230MHz
PBSS4240T,215 Applications
There are a lot of Nexperia USA Inc.
PBSS4240T,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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