PBSS4220V,115
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- Mfr.Part #
- PBSS4220V,115
- Manufacturer
- Nexperia
- Package / Case
- SOT-563, SOT-666
- Datasheet
- Download
- Description
- TRANS NPN 20V 2A SOT666
- Stock
- 265
- In Stock ：
- 265
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 900mW
- Frequency :
- 210MHz
- Gain Bandwidth Product :
- 210MHz
- Current - Collector Cutoff (Max) :
- 100nA
- Max Breakdown Voltage :
- 20V
- Operating Temperature :
- 150°C TJ
- Terminal Form :
- Flat
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Terminal Finish :
- Tin (Sn)
- Pin Count :
- 6
- Factory Lead Time :
- 4 Weeks
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- SOT-563, SOT-666
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 20V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 1A 2V
- Collector Base Voltage (VCBO) :
- 20V
- Number of Pins :
- 6
- Element Configuration :
- Single
- Transition Frequency :
- 210MHz
- Number of Elements :
- 1
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 20V
- Transistor Type :
- NPN
- Number of Terminations :
- 6
- Published :
- 2009
- Power Dissipation :
- 900mW
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- PBSS4220
- Max Collector Current :
- 2A
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 200mA, 2A
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 5V
- Datasheets
- PBSS4220V,115
NPN 150°C TJ 100nA 1 Elements 6 Terminations SILICON NPN SOT-563, SOT-666 Tape & Reel (TR) Surface Mount
PBSS4220V,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 1A 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 350mV @ 200mA, 2A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 210MHz is present in the part.There is a breakdown input voltage of 20V volts that it can take.Collector current can be as low as 2A volts at its maximum.
PBSS4220V,115 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 350mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 210MHz
PBSS4220V,115 Applications
There are a lot of Nexperia USA Inc.
PBSS4220V,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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