PBSS4130QAZ
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- Mfr.Part #
- PBSS4130QAZ
- Manufacturer
- NXP Semiconductors
- Package / Case
- 3-XDFN Exposed Pad
- Datasheet
- Download
- Description
- NEXPERIA PBSS4130QA - 30 V, 1 A
- Stock
- 270
- In Stock ：
- 270
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Current - Collector (Ic) (Max) :
- 1A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Frequency - Transition :
- 190MHz
- Voltage - Collector Emitter Breakdown (Max) :
- 30V
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vce Saturation (Max) @ Ib, Ic :
- 245mV @ 50mA, 1A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Type :
- NPN
- Power - Max :
- 325mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 1A 2V
- Factory Lead Time :
- 4 Weeks
- Mounting Type :
- Surface Mount
- Package / Case :
- 3-XDFN Exposed Pad
- Published :
- 2013
- Datasheets
- PBSS4130QAZ
NPN 150°C TJ 100nA ICBO 3-XDFN Exposed Pad Tape & Reel (TR) Surface Mount
PBSS4130QAZ Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 1A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 245mV @ 50mA, 1A.This device displays a 30V maximum voltage - Collector Emitter Breakdown.
PBSS4130QAZ Features
the DC current gain for this device is 180 @ 1A 2V
the vce saturation(Max) is 245mV @ 50mA, 1A
PBSS4130QAZ Applications
There are a lot of Nexperia USA Inc.
PBSS4130QAZ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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