PBSS4032PT,215
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- Mfr.Part #
- PBSS4032PT,215
- Manufacturer
- Nexperia
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 30V 2.4A TO236AB
- Stock
- 84,363
- In Stock ：
- 84,363
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 1.1W
- Transition Frequency :
- 160MHz
- JESD-609 Code :
- e3
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 30V
- Collector Emitter Voltage (VCEO) :
- 30V
- Mounting Type :
- Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 1A 2V
- Number of Pins :
- 3
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Gain Bandwidth Product :
- 160MHz
- Emitter Base Voltage (VEBO) :
- -5V
- Factory Lead Time :
- 4 Weeks
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Cut Tape (CT)
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Base Part Number :
- PBSS4032P
- Polarity/Channel Type :
- PNP
- Terminal Position :
- Dual
- Max Collector Current :
- 2.4A
- Transistor Type :
- PNP
- Power Dissipation :
- 1.1W
- Max Breakdown Voltage :
- 30V
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 330mV @ 200mA, 2A
- Frequency :
- 160MHz
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 30V
- Published :
- 2009
- hFE Min :
- 150
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 100nA
- Element Configuration :
- Single
- Terminal Form :
- Gull wing
- Datasheets
- PBSS4032PT,215
PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
PBSS4032PT,215 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 150 @ 1A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 330mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Parts of this part have transition frequencies of 160MHz.Single BJT transistor can take a breakdown input voltage of 30V volts.During maximum operation, collector current can be as low as 2.4A volts.
PBSS4032PT,215 Features
the DC current gain for this device is 150 @ 1A 2V
the vce saturation(Max) is 330mV @ 200mA, 2A
the emitter base voltage is kept at -5V
a transition frequency of 160MHz
PBSS4032PT,215 Applications
There are a lot of Nexperia USA Inc.
PBSS4032PT,215 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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