PBSS3515E,115
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- Mfr.Part #
- PBSS3515E,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-75, SOT-416
- Datasheet
- Download
- Description
- TRANS PNP 15V 0.5A SC75
- Stock
- 40,862
- In Stock ：
- 40,862
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Surface Mount :
- yes
- Package / Case :
- SC-75, SOT-416
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 100mA 2V
- ECCN Code :
- EAR99
- Frequency - Transition :
- 280MHz
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 280MHz
- Terminal Finish :
- Tin (Sn)
- Qualification Status :
- Not Qualified
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Operating Temperature :
- 150°C TJ
- Number of Terminations :
- 3
- Pin Count :
- 3
- Power - Max :
- 250mW
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- PNP
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Polarity/Channel Type :
- PNP
- Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- RoHS Status :
- ROHS3 Compliant
- JESD-30 Code :
- R-PDSO-G3
- Voltage - Collector Emitter Breakdown (Max) :
- 15V
- Power Dissipation-Max (Abs) :
- 0.25W
- Number of Elements :
- 1
- Base Part Number :
- PBSS3515
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector (Ic) (Max) :
- 500mA
- Published :
- 2005
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 50mA, 500mA
- Terminal Form :
- Gull wing
- Datasheets
- PBSS3515E,115
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-75, SOT-416 Tape & Reel (TR) Surface Mount
PBSS3515E,115 Overview
In this device, the DC current gain is 150 @ 100mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 50mA, 500mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 280MHz.There is a 15V maximal voltage in the device due to collector-emitter breakdown.
PBSS3515E,115 Features
the DC current gain for this device is 150 @ 100mA 2V
the vce saturation(Max) is 250mV @ 50mA, 500mA
a transition frequency of 280MHz
PBSS3515E,115 Applications
There are a lot of NXP USA Inc.
PBSS3515E,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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