PBSS306PZ,135
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- Mfr.Part #
- PBSS306PZ,135
- Manufacturer
- Nexperia
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 4.1A SOT223
- Stock
- 66,360
- In Stock ：
- 66,360
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Gull wing
- Collector Emitter Breakdown Voltage :
- 100V
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Factory Lead Time :
- 4 Weeks
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Application :
- SWITCHING
- Frequency :
- 100MHz
- Height :
- 6.35mm
- Mounting Type :
- Surface Mount
- Transistor Type :
- PNP
- hFE Min :
- 200
- Transition Frequency :
- 100MHz
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 4
- Terminal Position :
- Dual
- Pin Count :
- 4
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 100V
- Termination :
- SMD/SMT
- Emitter Base Voltage (VEBO) :
- 5V
- Turn Off Time-Max (toff) :
- 325ns
- Element Configuration :
- Single
- Width :
- 6.35mm
- Gain Bandwidth Product :
- 100MHz
- Max Collector Current :
- 4.1A
- Package / Case :
- TO-261-4, TO-261AA
- Polarity/Channel Type :
- PNP
- Weight :
- 4.535924g
- Power Dissipation :
- 2W
- Terminal Finish :
- Tin (Sn)
- Vce Saturation (Max) @ Ib, Ic :
- 325mV @ 410mA, 4.1A
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 4
- Published :
- 2011
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Length :
- 12.7mm
- Max Power Dissipation :
- 2W
- Base Part Number :
- PBSS306P
- ECCN Code :
- EAR99
- Case Connection :
- COLLECTOR
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 100V
- Max Breakdown Voltage :
- 100V
- Datasheets
- PBSS306PZ,135
PNP 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
PBSS306PZ,135 Overview
This device has a DC current gain of 100 @ 2A 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 325mV @ 410mA, 4.1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 100V volts can be used.A maximum collector current of 4.1A volts is possible.
PBSS306PZ,135 Features
the DC current gain for this device is 100 @ 2A 2V
the vce saturation(Max) is 325mV @ 410mA, 4.1A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS306PZ,135 Applications
There are a lot of Nexperia USA Inc.
PBSS306PZ,135 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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