PBSS306PX,115
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- Mfr.Part #
- PBSS306PX,115
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 3.7A SOT89
- Stock
- 195
- In Stock ：
- 195
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Case Connection :
- COLLECTOR
- Mount :
- Surface Mount
- Frequency :
- 100MHz
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Height :
- 6.35mm
- Collector Emitter Breakdown Voltage :
- 100V
- Max Power Dissipation :
- 2.1W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 2V
- Collector Emitter Voltage (VCEO) :
- 100V
- Gain Bandwidth Product :
- 100MHz
- Terminal Form :
- Flat
- JESD-609 Code :
- e3
- Transistor Type :
- PNP
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- Max Collector Current :
- 3.7A
- Collector Base Voltage (VCBO) :
- 100V
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 400mA, 4A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Termination :
- SMD/SMT
- Factory Lead Time :
- 4 Weeks
- Published :
- 2009
- Pin Count :
- 3
- Weight :
- 4.535924g
- Power Dissipation :
- 2.1W
- hFE Min :
- 200
- Number of Elements :
- 1
- Polarity/Channel Type :
- PNP
- Transistor Application :
- SWITCHING
- Width :
- 6.35mm
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 100V
- Transition Frequency :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Base Part Number :
- PBSS306P
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-243AA
- Lead Free :
- Lead Free
- Length :
- 12.7mm
- Element Configuration :
- Single
- Terminal Finish :
- Tin (Sn)
- Number of Pins :
- 3
- Datasheets
- PBSS306PX,115
SOT89.jpg)
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
PBSS306PX,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 2A 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 400mA, 4A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 100V volts that it can take.Collector current can be as low as 3.7A volts at its maximum.
PBSS306PX,115 Features
the DC current gain for this device is 100 @ 2A 2V
the vce saturation(Max) is 300mV @ 400mA, 4A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS306PX,115 Applications
There are a lot of Nexperia USA Inc.
PBSS306PX,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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