PBSS305PD,115
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- Mfr.Part #
- PBSS305PD,115
- Manufacturer
- Nexperia
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- TRANS PNP 100V 2A 6TSOP
- Stock
- 6,946
- In Stock ：
- 6,946
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency :
- 110MHz
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Published :
- 2006
- Length :
- 3.1mm
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 110MHz
- Number of Pins :
- 6
- Current - Collector Cutoff (Max) :
- 100nA
- Lead Free :
- Lead Free
- Base Part Number :
- PBSS305P
- Transistor Application :
- SWITCHING
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 6
- Max Collector Current :
- 2A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 145 @ 1A 2V
- Pin Count :
- 6
- Terminal Finish :
- Tin (Sn)
- Max Power Dissipation :
- 2.5W
- Collector Emitter Saturation Voltage :
- 395mV
- Height :
- 1mm
- Emitter Base Voltage (VEBO) :
- 5V
- Max Breakdown Voltage :
- 100V
- Gain Bandwidth Product :
- 110MHz
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 395mV @ 300mA, 3A
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 100V
- Package / Case :
- SC-74, SOT-457
- Power - Max :
- 1.1W
- Collector Emitter Breakdown Voltage :
- 100V
- Factory Lead Time :
- 4 Weeks
- Power Dissipation :
- 2.5W
- Mounting Type :
- Surface Mount
- Transistor Type :
- PNP
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 100V
- Width :
- 1.7mm
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- PBSS305PD,115
PNP 150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SC-74, SOT-457 Tape & Reel (TR) Surface Mount
PBSS305PD,115 Overview
In this device, the DC current gain is 145 @ 1A 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 395mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 395mV @ 300mA, 3A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 110MHz.Input voltage breakdown is available at 100V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
PBSS305PD,115 Features
the DC current gain for this device is 145 @ 1A 2V
a collector emitter saturation voltage of 395mV
the vce saturation(Max) is 395mV @ 300mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 110MHz
PBSS305PD,115 Applications
There are a lot of Nexperia USA Inc.
PBSS305PD,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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