PBSS305ND,115
- Mfr.Part #
- PBSS305ND,115
- Manufacturer
- Nexperia
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- NEXPERIA PBSS305ND - SMALL SIGNA
- Stock
- 2,235
- In Stock :
- 2,235
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 100V
- Power Dissipation :
- 2.5W
- Vce Saturation (Max) @ Ib, Ic :
- 360mV @ 400mA, 4A
- Terminal Finish :
- Tin (Sn)
- Lead Free :
- Lead Free
- Turn Off Time-Max (toff) :
- 589ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- SC-74, SOT-457
- Base Part Number :
- PBSS305N
- JESD-609 Code :
- e3
- Current - Collector (Ic) (Max) :
- 1A
- Published :
- 2007
- Current - Collector Cutoff (Max) :
- 100nA
- Operating Temperature :
- 150°C TJ
- Terminal Form :
- Gull wing
- Power - Max :
- 1.1W
- Max Power Dissipation :
- 2.5W
- Max Collector Current :
- 3A
- Emitter Base Voltage (VEBO) :
- 5V
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Transistor Type :
- NPN
- Number of Pins :
- 6
- Terminal Position :
- Dual
- Factory Lead Time :
- 4 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Gain Bandwidth Product :
- 140MHz
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 140MHz
- Polarity/Channel Type :
- NPN
- Pin Count :
- 6
- Number of Elements :
- 1
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 100V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 170 @ 500mA 2V
- Turn On Time-Max (ton) :
- 355ns
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Frequency :
- 140MHz
- Number of Terminations :
- 6
- Collector Emitter Breakdown Voltage :
- 100V
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 100V
- Datasheets
- PBSS305ND,115

NPN 150°C TJ 100nA 1 Elements 6 Terminations SILICON NPN SC-74, SOT-457 Tape & Reel (TR) Surface Mount
PBSS305ND,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 170 @ 500mA 2V.When VCE saturation is 360mV @ 400mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 140MHz.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 3A volts can be achieved.
PBSS305ND,115 Features
the DC current gain for this device is 170 @ 500mA 2V
the vce saturation(Max) is 360mV @ 400mA, 4A
the emitter base voltage is kept at 5V
a transition frequency of 140MHz
PBSS305ND,115 Applications
There are a lot of Nexperia USA Inc.
PBSS305ND,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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