PBSS304PD,115
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- Mfr.Part #
- PBSS304PD,115
- Manufacturer
- NXP Semiconductors
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- NEXPERIA PBSS304PD - SMALL SIGNA
- Stock
- 3,112
- In Stock ：
- 3,112
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Current - Collector (Ic) (Max) :
- 1A
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- PNP
- Published :
- 2009
- Terminal Position :
- Dual
- Number of Pins :
- 6
- Emitter Base Voltage (VEBO) :
- 5V
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 80V
- Gain Bandwidth Product :
- 110MHz
- Frequency :
- 110MHz
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 80V
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 2.5W
- Factory Lead Time :
- 4 Weeks
- Turn On Time-Max (ton) :
- 90ns
- Transition Frequency :
- 110MHz
- Number of Terminations :
- 6
- Max Power Dissipation :
- 1.1W
- Lead Free :
- Lead Free
- Base Part Number :
- PBSS304P
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 155 @ 500mA 2V
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Package / Case :
- SC-74, SOT-457
- Polarity/Channel Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 540mV @ 500mA, 5A
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Operating Temperature :
- 150°C TJ
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Terminal Finish :
- Tin (Sn)
- Pin Count :
- 6
- Max Collector Current :
- 3A
- Max Breakdown Voltage :
- 80V
- Datasheets
- PBSS304PD,115
PNP 150°C TJ 100nA 1 Elements 6 Terminations SILICON PNP SC-74, SOT-457 Tape & Reel (TR) Surface Mount
PBSS304PD,115 Overview
This device has a DC current gain of 155 @ 500mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 540mV @ 500mA, 5A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 110MHz.A breakdown input voltage of 80V volts can be used.A maximum collector current of 3A volts is possible.
PBSS304PD,115 Features
the DC current gain for this device is 155 @ 500mA 2V
the vce saturation(Max) is 540mV @ 500mA, 5A
the emitter base voltage is kept at 5V
a transition frequency of 110MHz
PBSS304PD,115 Applications
There are a lot of Nexperia USA Inc.
PBSS304PD,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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