PBSS303NX,115
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- Mfr.Part #
- PBSS303NX,115
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 30V 5.1A SOT89
- Stock
- 325
- In Stock ：
- 325
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Surface Mount
- Terminal Finish :
- Tin (Sn)
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Elements :
- 1
- Max Collector Current :
- 5.1A
- Mounting Type :
- Surface Mount
- Frequency :
- 130MHz
- Gain Bandwidth Product :
- 130MHz
- Transistor Type :
- NPN
- Case Connection :
- COLLECTOR
- Published :
- 2009
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 130MHz
- JESD-30 Code :
- R-PSSO-F3
- Max Breakdown Voltage :
- 30V
- Number of Terminations :
- 3
- Terminal Form :
- Flat
- Pin Count :
- 3
- Turn On Time-Max (ton) :
- 65ns
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 2.1W
- Package / Case :
- TO-243AA
- Turn Off Time-Max (toff) :
- 375ns
- Element Configuration :
- Single
- Base Part Number :
- PBSS303N
- Factory Lead Time :
- 4 Weeks
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 30V
- Collector Emitter Breakdown Voltage :
- 30V
- Collector Emitter Voltage (VCEO) :
- 30V
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 4
- Max Power Dissipation :
- 2.1W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 2A 2V
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 220mV @ 255mA, 5.1A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Datasheets
- PBSS303NX,115
SOT89.jpg)
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
PBSS303NX,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 250 @ 2A 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 220mV @ 255mA, 5.1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.A transition frequency of 130MHz is present in the part.There is a breakdown input voltage of 30V volts that it can take.Collector current can be as low as 5.1A volts at its maximum.
PBSS303NX,115 Features
the DC current gain for this device is 250 @ 2A 2V
the vce saturation(Max) is 220mV @ 255mA, 5.1A
the emitter base voltage is kept at 5V
a transition frequency of 130MHz
PBSS303NX,115 Applications
There are a lot of Nexperia USA Inc.
PBSS303NX,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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