PBSS303ND,115
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- Mfr.Part #
- PBSS303ND,115
- Manufacturer
- Nexperia
- Package / Case
- SC-74, SOT-457
- Datasheet
- Download
- Description
- TRANS NPN 60V 1A 6TSOP
- Stock
- 1,814
- In Stock ：
- 1,814
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 1.1W
- Transition Frequency :
- 140MHz
- Max Breakdown Voltage :
- 60V
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 345 @ 500mA 2V
- Emitter Base Voltage (VEBO) :
- 5V
- Element Configuration :
- Single
- Power Dissipation :
- 2.5W
- Base Part Number :
- PBSS303N
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Terminal Position :
- Dual
- Number of Terminations :
- 6
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Collector Base Voltage (VCBO) :
- 60V
- Terminal Finish :
- Tin (Sn)
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Number of Pins :
- 6
- Package / Case :
- SC-74, SOT-457
- Lead Free :
- Lead Free
- Frequency :
- 140MHz
- Factory Lead Time :
- 4 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 2.5W
- Operating Temperature :
- 150°C TJ
- Published :
- 2007
- JESD-609 Code :
- e3
- Current - Collector (Ic) (Max) :
- 1A
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 140MHz
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 515mV @ 600mA, 6A
- Max Collector Current :
- 3A
- Collector Emitter Breakdown Voltage :
- 60V
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 100nA
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 6
- Collector Emitter Voltage (VCEO) :
- 60V
- REACH SVHC :
- No SVHC
- Datasheets
- PBSS303ND,115
NPN 150°C TJ 100nA 1 Elements 6 Terminations SILICON NPN SC-74, SOT-457 Tape & Reel (TR) Surface Mount
PBSS303ND,115 Overview
This device has a DC current gain of 345 @ 500mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 515mV @ 600mA, 6A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As you can see, the part has a transition frequency of 140MHz.A breakdown input voltage of 60V volts can be used.A maximum collector current of 3A volts is possible.
PBSS303ND,115 Features
the DC current gain for this device is 345 @ 500mA 2V
the vce saturation(Max) is 515mV @ 600mA, 6A
the emitter base voltage is kept at 5V
a transition frequency of 140MHz
PBSS303ND,115 Applications
There are a lot of Nexperia USA Inc.
PBSS303ND,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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