PBSS302NX,115
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- Mfr.Part #
- PBSS302NX,115
- Manufacturer
- Nexperia
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 20V 5.3A SOT89
- Stock
- 35,958
- In Stock ：
- 35,958
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- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Terminal Form :
- Flat
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 5.3A
- Terminal Finish :
- Tin (Sn)
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Case Connection :
- COLLECTOR
- Collector Base Voltage (VCBO) :
- 20V
- Gain Bandwidth Product :
- 140MHz
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Transition Frequency :
- 140MHz
- Base Part Number :
- PBSS302N
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 2.1W
- Vce Saturation (Max) @ Ib, Ic :
- 200mV @ 265mA, 5.3A
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 2A 2V
- Package / Case :
- TO-243AA
- Collector Emitter Breakdown Voltage :
- 20V
- Number of Terminations :
- 3
- Turn On Time-Max (ton) :
- 55ns
- Power Dissipation :
- 2.1W
- Max Breakdown Voltage :
- 20V
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Elements :
- 1
- Published :
- 2009
- Height :
- 6.35mm
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Factory Lead Time :
- 4 Weeks
- Length :
- 12.7mm
- Collector Emitter Voltage (VCEO) :
- 20V
- Radiation Hardening :
- No
- Frequency :
- 140MHz
- Lead Free :
- Lead Free
- Weight :
- 4.535924g
- Width :
- 6.35mm
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Datasheets
- PBSS302NX,115
SOT89.jpg)
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
PBSS302NX,115 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 250 @ 2A 2V.When VCE saturation is 200mV @ 265mA, 5.3A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 140MHz.This device can take an input voltage of 20V volts before it breaks down.A maximum collector current of 5.3A volts can be achieved.
PBSS302NX,115 Features
the DC current gain for this device is 250 @ 2A 2V
the vce saturation(Max) is 200mV @ 265mA, 5.3A
the emitter base voltage is kept at 5V
a transition frequency of 140MHz
PBSS302NX,115 Applications
There are a lot of Nexperia USA Inc.
PBSS302NX,115 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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