NXH100B120H3Q0STG
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- Mfr.Part #
- NXH100B120H3Q0STG
- Manufacturer
- onsemi
- Package / Case
- Module
- Datasheet
- Download
- Description
- IGBT MODULE 1200V 50A 186W PIM22
- Stock
- 13,664
- In Stock ：
- 13,664
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - IGBTs - Modules
- Vce(on) (Max) @ Vge, Ic :
- 2.3V @ 15V, 50A
- Package / Case :
- Module
- IGBT Type :
- Trench Field Stop
- Factory Lead Time :
- 37 Weeks
- Configuration :
- 2 Independent
- Power - Max :
- 186W
- Mounting Type :
- Chassis Mount
- Current - Collector (Ic) (Max) :
- 50A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -40°C~150°C TJ
- Packaging :
- Tray
- NTC Thermistor :
- No
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Input Capacitance (Cies) @ Vce :
- 9.075nF @ 20V
- Current - Collector Cutoff (Max) :
- 200μA
- Input :
- Standard
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- NXH100B120H3Q0STG
NXH100B120H3Q0STG datasheet pdf and Transistors - IGBTs - Modules product details from ON Semiconductor stock available at
NXH100B120H3Q0STG Description
NXH100B120H3Q0STG is a type of power module containing a dual boost stage. The integrated field stop trench IGBTs and low reverse recovery and fast switching SiC diodes provide lower conduction losses and switching losses, enabling designers to achieve high efficiency and superior reliability. Based on its sepcific characteristics, the NXH100B120H3Q0STG IGBT power module is well suited for solar inverter, uninterruptible power supplies, and energy storage systems.
NXH100B120H3Q0STG Features
Low reverse recovery and fast switching SiC diodes
Lower conduction losses and switching losses
1200 V ultra field stop IGBTs
Low inductive layout
NXH100B120H3Q0STG Applications
Solar inverter
Uninterruptible power supplies
Energy storage systems
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