NVGS3443T1G
- Mfr.Part #
- NVGS3443T1G
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6
- Datasheet
- Download
- Description
- SINGLE P-CHANNEL POWER MOSFET -2
- Stock
- 24,801
- In Stock :
- 24,801
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Turn On Delay Time :
- 10 ns
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Rds On (Max) @ Id, Vgs :
- 65m Ω @ 4.4A, 4.5V
- Drain to Source Voltage (Vdss) :
- 20V
- Terminal Finish :
- Tin (Sn)
- Number of Elements :
- 1
- Pin Count :
- 6
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 565pF @ 5V
- Drain Current-Max (Abs) (ID) :
- 2.2A
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Dual
- Number of Terminations :
- 6
- Gate to Source Voltage (Vgs) :
- 12V
- Fall Time (Typ) :
- 31 ns
- FET Type :
- P-Channel
- Reference Standard :
- AEC-Q101
- Pbfree Code :
- yes
- Turn-Off Delay Time :
- 30 ns
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Package / Case :
- SOT-23-6
- Published :
- 2011
- DS Breakdown Voltage-Min :
- 20V
- Number of Pins :
- 6
- Additional Feature :
- ULTRA LOW RESISTANCE
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- ECCN Code :
- EAR99
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 15nC @ 4.5V
- Rise Time :
- 18ns
- Current - Continuous Drain (Id) @ 25°C :
- 3.1A Ta
- Max Power Dissipation :
- 1W
- Surface Mount :
- yes
- Factory Lead Time :
- 13 Weeks
- Continuous Drain Current (ID) :
- 3.1A
- Element Configuration :
- Single
- Datasheets
- NVGS3443T1G

P-Channel Tape & Reel (TR) 65m Ω @ 4.4A, 4.5V 565pF @ 5V 15nC @ 4.5V 20V SOT-23-6
NVGS3443T1G Description
The NVGS3443T1G power MOSFET from ON Semiconductor is ideal if you need to amplify or switch between signals in your design. It can dissipate up to 2000 mW of power. To allow for easy mounting and secure delivery, this device will be sent in tape and reel packing. This enhancement mode MOSFET transistor has a P channel. The operating temperature range for this MOSFET transistor is -55 °C to 150 °C.
NVGS3443T1G Features
-
Ultra-Low RDS(on)
-
Higher Efficiency Extending Battery Life
-
Miniature TSOP?6 Surface Mount Package
-
These Devices are Pb?Free and are RoHS Compliant
-
NVGS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable
NVGS3443T1G Applications
-
Cellular
-
Cordless Telephones
-
PCMCIA Cards
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