NTTS2P03R2

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

2.1A

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

Power Dissipation-Max :

600mW Ta

Transistor Element Material :

SILICON

Number of Terminations :

8

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e0

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

240

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

Non-RoHS Compliant

Vgs(th) (Max) @ Id :

3V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Voltage (Vdss) :

30V

Operating Mode :

ENHANCEMENT MODE

Pin Count :

8

Terminal Position :

Dual

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

JESD-30 Code :

S-PDSO-G8

Terminal Finish :

TIN LEAD

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

500pF @ 24V

Mounting Type :

Surface Mount

Pbfree Code :

yes

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

2.1A Ta

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

COMMERCIAL

Drain-source On Resistance-Max :

0.085Ohm

Vgs (Max) :

±20V

FET Type :

P-Channel

DS Breakdown Voltage-Min :

30V

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

85m Ω @ 2.48A, 10V