NTR4503NT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-236-3, SC-59, SOT-23-3

Fall Time (Typ) :

6.7 ns

Turn On Delay Time :

5.8 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Contact Plating :

Tin

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

110m Ω @ 2.5A, 10V

Resistance :

85mOhm

Feedback Cap-Max (Crss) :

25 pF

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Current - Continuous Drain (Id) @ 25°C :

1.5A Ta

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Current Rating :

2.5A

REACH SVHC :

No SVHC

Surface Mount :

yes

Pin Count :

3

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Nominal Vgs :

1.75 V

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 24V

Terminal Position :

Dual

Lead Free :

Lead Free

Pbfree Code :

yes

Element Configuration :

Single

Factory Lead Time :

4 Weeks

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Rise Time :

6.7ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

420mW Ta

Drain to Source Breakdown Voltage :

30V

Threshold Voltage :

1.75V

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 10V

Height :

1.01mm

Power Dissipation :

730mW

ECCN Code :

EAR99

Vgs (Max) :

±20V

Voltage - Rated DC :

30V

Continuous Drain Current (ID) :

2.5A

Length :

3.04mm

Vgs(th) (Max) @ Id :

3V @ 250µA

Width :

1.4mm

FET Type :

N-Channel

Radiation Hardening :

No

Turn-Off Delay Time :

13.6 ns