NTP90N02G

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Mfr.Part #
NTP90N02G
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 24V 90A TO220AB
Stock
12,630
In Stock :
12,630

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Charge (Qg) (Max) @ Vgs :
29nC @ 4.5V
Mounting Type :
Through Hole
Number of Elements :
1
Rds On (Max) @ Id, Vgs :
5.8m Ω @ 90A, 10V
JEDEC-95 Code :
TO-220AB
Current - Continuous Drain (Id) @ 25°C :
90A Ta
DS Breakdown Voltage-Min :
24V
JESD-609 Code :
e3
RoHS Status :
ROHS3 Compliant
Drain Current-Max (Abs) (ID) :
90A
Input Capacitance (Ciss) (Max) @ Vds :
2.12pF @ 20V
Pulsed Drain Current-Max (IDM) :
200A
Time@Peak Reflow Temperature-Max (s) :
40
Packaging :
Tube
FET Type :
N-Channel
Operating Temperature :
-55°C~150°C TJ
Power Dissipation-Max :
85W Tc
Configuration :
SINGLE WITH BUILT-IN DIODE
Transistor Application :
SWITCHING
Terminal Finish :
MATTE TIN
Transistor Element Material :
SILICON
Vgs (Max) :
±20V
Terminal Position :
Single
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Drain to Source Voltage (Vdss) :
24V
Vgs(th) (Max) @ Id :
3V @ 250µA
Package / Case :
TO-220-3
Operating Mode :
ENHANCEMENT MODE
Drain-source On Resistance-Max :
0.0058ohm
Surface Mount :
No
Qualification Status :
COMMERCIAL
Pbfree Code :
yes
Case Connection :
DRAIN
Number of Terminations :
3
Pin Count :
3
JESD-30 Code :
R-PSFM-T3
Avalanche Energy Rating (Eas) :
733 mJ
Peak Reflow Temperature (Cel) :
260
Datasheets
NTP90N02G
Introducing Transistors - FETs, MOSFETs - Single onsemi NTP90N02G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3, Number of Terminations:3, NTP90N02G pinout, NTP90N02G datasheet PDF, NTP90N02G amp .Beyond Transistors - FETs, MOSFETs - Single onsemi NTP90N02G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi NTP90N02G


N-Channel Tube 5.8m Ω @ 90A, 10V ±20V 2.12pF @ 20V 29nC @ 4.5V 24V TO-220-3

NTP90N02G Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 733 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2.12pF @ 20V maximal input capacitance.A device can conduct a maximum continuous current of [90A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 200A.The DS breakdown voltage should be maintained above 24V to maintain normal operation.To operate this transistor, you will need a 24V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).

NTP90N02G Features


the avalanche energy rating (Eas) is 733 mJ
based on its rated peak drain current 200A.
a 24V drain to source voltage (Vdss)


NTP90N02G Applications


There are a lot of Rochester Electronics, LLC
NTP90N02G applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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