NTP5864NG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Power Dissipation-Max :

107W Tc

Package / Case :

TO-220-3

Radiation Hardening :

No

Transistor Element Material :

SILICON

Pin Count :

3

Published :

2011

Rds On (Max) @ Id, Vgs :

12.4m Ω @ 20A, 10V

Number of Elements :

1

JEDEC-95 Code :

TO-220AB

Gate to Source Voltage (Vgs) :

20V

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~175°C TJ

Rise Time :

6.4ns

Turn On Delay Time :

10 ns

Height :

4.82mm

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Continuous Drain Current (ID) :

63A

Turn-Off Delay Time :

18 ns

Current - Continuous Drain (Id) @ 25°C :

63A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Width :

15.75mm

Vgs (Max) :

±20V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Avalanche Energy Rating (Eas) :

80 mJ

Terminal Finish :

Tin (Sn)

Power Dissipation :

107W

Element Configuration :

Single

Fall Time (Typ) :

4.6 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Breakdown Voltage :

60V

Factory Lead Time :

20 Weeks

JESD-609 Code :

e3

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

1680pF @ 25V

Surface Mount :

No

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

252A

Length :

10.28mm

Pbfree Code :

yes

Case Connection :

DRAIN

Number of Terminations :

3