NTP45N06

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

Non-RoHS Compliant

Element Configuration :

Single

Mounting Type :

Through Hole

Vgs (Max) :

±20V

Power Dissipation-Max :

2.4W Ta 125W Tj

Drain to Source Breakdown Voltage :

60V

JEDEC-95 Code :

TO-220AB

Pulsed Drain Current-Max (IDM) :

150A

Lead Free :

Contains Lead

Case Connection :

DRAIN

Mount :

Through Hole

Voltage - Rated DC :

60V

Power Dissipation :

125W

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

1725pF @ 25V

Fall Time (Typ) :

106 ns

Avalanche Energy Rating (Eas) :

240 mJ

Peak Reflow Temperature (Cel) :

240

Reach Compliance Code :

not_compliant

Continuous Drain Current (ID) :

45A

Rds On (Max) @ Id, Vgs :

26m Ω @ 22.5A, 10V

JESD-609 Code :

e0

Package / Case :

TO-220-3

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

FET Type :

N-Channel

Current Rating :

45A

Pin Count :

3

Terminal Finish :

Tin/Lead (Sn/Pb)

Vgs(th) (Max) @ Id :

4V @ 250µA

HTS Code :

8541.29.00.95

Rise Time :

101ns

JESD-30 Code :

R-PSFM-T3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

33 ns

Gate to Source Voltage (Vgs) :

20V

Published :

2005

Current - Continuous Drain (Id) @ 25°C :

45A Ta

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Number of Terminations :

3

Drain-source On Resistance-Max :

0.026ohm

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Element Material :

SILICON

Number of Elements :

1

Packaging :

Tube

Qualification Status :

Not Qualified