NTP27N06G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Case Connection :

DRAIN

Qualification Status :

COMMERCIAL

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Tube

Vgs (Max) :

±20V

Drain to Source Voltage (Vdss) :

60V

Pulsed Drain Current-Max (IDM) :

80A

Package / Case :

TO-220-3

Surface Mount :

No

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Finish :

MATTE TIN

Current - Continuous Drain (Id) @ 25°C :

27A Ta

Pbfree Code :

No

Avalanche Energy Rating (Eas) :

109 mJ

Reach Compliance Code :

Unknown

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Terminal Position :

Single

Number of Terminations :

3

JESD-30 Code :

R-PSFM-T3

Power Dissipation-Max :

88.2W Tc

Drain-source On Resistance-Max :

0.046Ohm

Input Capacitance (Ciss) (Max) @ Vds :

1.015pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

46m Ω @ 13.5A, 10V

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

27A

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

60V