NTP13N10
- Mfr.Part #
- NTP13N10
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 13A TO220AB
- Stock
- 10,786
- In Stock :
- 10,786
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Reach Compliance Code :
- not_compliant
- Avalanche Energy Rating (Eas) :
- 85 mJ
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- JEDEC-95 Code :
- TO-220AB
- Published :
- 2006
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 13A Ta
- Packaging :
- Tube
- Peak Reflow Temperature (Cel) :
- 240
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Drain-source On Resistance-Max :
- 0.165Ohm
- Current Rating :
- 13A
- Pin Count :
- 3
- Drain to Source Breakdown Voltage :
- 100V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~175°C TJ
- Vgs (Max) :
- ±20V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Package / Case :
- TO-220-3
- Transistor Element Material :
- SILICON
- HTS Code :
- 8541.29.00.95
- Rise Time :
- 40ns
- Power Dissipation :
- 64.7W
- Pbfree Code :
- No
- Continuous Drain Current (ID) :
- 13A
- Gate to Source Voltage (Vgs) :
- 20V
- Element Configuration :
- Single
- Number of Elements :
- 1
- Fall Time (Typ) :
- 36 ns
- Qualification Status :
- Not Qualified
- Power Dissipation-Max :
- 64.7W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 10V
- Mount :
- Through Hole
- Turn-Off Delay Time :
- 20 ns
- Voltage - Rated DC :
- 100V
- Input Capacitance (Ciss) (Max) @ Vds :
- 550pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 165m Ω @ 6.5A, 10V
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Case Connection :
- DRAIN
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Lead Free :
- Contains Lead
- RoHS Status :
- Non-RoHS Compliant
- JESD-609 Code :
- e0
- Datasheets
- NTP13N10

N-Channel Tube 165m Ω @ 6.5A, 10V ±20V 550pF @ 25V 20nC @ 10V TO-220-3
NTP13N10 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 85 mJ.A device's maximal input capacitance is 550pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 13A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 100V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 20 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (10V).
NTP13N10 Features
the avalanche energy rating (Eas) is 85 mJ
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 20 ns
NTP13N10 Applications
There are a lot of ON Semiconductor
NTP13N10 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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