NTNS4C69NTCG

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Product Status :

Obsolete

Operating Temperature :

-55°C ~ 150°C (TJ)

Power Dissipation-Max (Abs) :

0.178 W

Package :

Tape and Reel (TR)

Polarity/Channel Type :

N-Channel

Pbfree Code :

yes

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.155 Ω

Supplier Device Package :

SOT-883 (XDFN3) (1x0.6)

Series :

-

Rds On (Max) @ Id, Vgs :

155mOhm @ 300mA, 4.5V

Vgs (Max) :

±12V

Transistor Element Material :

SILICON

Number of Elements :

1

Terminal Position :

BOTTOM

Power Dissipation (Max) :

178mW (Ta)

Input Capacitance (Ciss) (Max) @ Vds :

75 pF @ 15 V

DS Breakdown Voltage-Min :

30 V

Transistor Application :

SWITCHING

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

3-XFDFN

Gate Charge (Qg) (Max) @ Vgs :

0.9 nC @ 4.5 V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Technology :

MOSFET (Metal Oxide)

Mounting Type :

Surface Mount

Terminal Form :

NO LEAD

Number of Terminals :

3

Package Shape :

RECTANGULAR

FET Feature :

-

Drain to Source Voltage (Vdss) :

30 V

JESD-30 Code :

R-PBCC-N3

FET Type :

N-Channel

Brand Name :

ON Semiconductor

Operating Mode :

ENHANCEMENT MODE

Manufacturer :

ON Semiconductor

Terminal Finish :

Nickel/Gold/Palladium (Ni/Au/Pd)

Current - Continuous Drain (Id) @ 25°C :

1A (Ta)

Drive Voltage (Max Rds On, Min Rds On) :

1.8V, 4.5V

Surface Mount :

yes

Reach Compliance Code :

Compliant

Vgs(th) (Max) @ Id :

1.1V @ 10μA