NTF5P03T3

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2006

Continuous Drain Current (ID) :

5A

Power Dissipation :

3.13W

Time@Peak Reflow Temperature-Max (s) :

40

Factory Lead Time :

15 Weeks

Radiation Hardening :

No

Height :

1.65mm

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED

ECCN Code :

EAR99

Turn On Delay Time :

16 ns

Avalanche Energy Rating (Eas) :

250 mJ

Fall Time (Typ) :

24 ns

Resistance :

100MOhm

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Threshold Voltage :

-1.75V

Transistor Application :

SWITCHING

Length :

6.7mm

Packaging :

Tape and Reel (TR)

Lifecycle Status :

ACTIVE (Last Updated: 6 days ago)

Input Capacitance (Ciss) (Max) @ Vds :

950pF @ 25V

Power Dissipation-Max :

1.56W Ta

Terminal Position :

Dual

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs(th) (Max) @ Id :

3V @ 250µA

Terminal Finish :

Tin (Sn)

Drain Current-Max (Abs) (ID) :

3.7A

Width :

3.7mm

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Turn-Off Delay Time :

23 ns

JESD-609 Code :

e3

Voltage - Rated DC :

-30V

Rds On (Max) @ Id, Vgs :

100m Ω @ 5.2A, 10V

Current Rating :

-5.2A

Current - Continuous Drain (Id) @ 25°C :

3.7A Ta

REACH SVHC :

No SVHC

Rise Time :

45ns

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Surface Mount :

yes

Pbfree Code :

yes

FET Type :

P-Channel

Mounting Type :

Surface Mount

Pin Count :

4

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

-30V

Number of Terminations :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Terminal Form :

Gull wing

Number of Pins :

4

Transistor Element Material :

SILICON

Package / Case :

TO-261-4, TO-261AA

Drain to Source Voltage (Vdss) :

30V