NTD3813N-1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

963pF @ 12V

Current - Continuous Drain (Id) @ 25°C :

9.6A Ta 51A Tc

Drain-source On Resistance-Max :

0.0145Ohm

Pbfree Code :

yes

Terminal Position :

Single

Qualification Status :

COMMERCIAL

Terminal Finish :

Tin

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

16V

Pulsed Drain Current-Max (IDM) :

114A

JESD-30 Code :

R-PSSO-F3

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

2.5V @ 250μA

RoHS Status :

ROHS3 Compliant

Terminal Form :

Flat

Avalanche Energy Rating (Eas) :

15 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

3

Rds On (Max) @ Id, Vgs :

8.75m Ω @ 15A, 10V

Drain Current-Max (Abs) (ID) :

9.6A

Drain to Source Voltage (Vdss) :

16V

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

12.8nC @ 4.5V

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Case Connection :

DRAIN

Vgs (Max) :

±16V

Transistor Element Material :

SILICON

Number of Terminations :

3

Transistor Application :

SWITCHING

Surface Mount :

yes

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Power Dissipation-Max :

1.2W Ta 34.9W Tc