NTD3808NT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

12A Ta 76A Tc

Qualification Status :

COMMERCIAL

Number of Elements :

1

Transistor Element Material :

SILICON

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

12A

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±16V

Avalanche Energy Rating (Eas) :

29.4 mJ

Terminal Position :

Single

JESD-609 Code :

e3

Terminal Finish :

Tin

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Number of Terminations :

2

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 4.5V

Pin Count :

3

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

Unknown

Drain-source On Resistance-Max :

0.0085Ohm

Pulsed Drain Current-Max (IDM) :

152A

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

16V

JESD-30 Code :

R-PSSO-G2

DS Breakdown Voltage-Min :

16V

Mounting Type :

Surface Mount

Power Dissipation-Max :

1.3W Ta 52W Tc

Rds On (Max) @ Id, Vgs :

5.8m Ω @ 15A, 10V

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

1.66pF @ 12V

Configuration :

SINGLE WITH BUILT-IN DIODE