NTD3808N-35G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

COMMERCIAL

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Terminal Finish :

Tin

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.0085Ohm

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

1.66pF @ 12V

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

16V

Power Dissipation-Max :

1.3W Ta 52W Tc

Number of Terminations :

3

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

12A

Package / Case :

TO-251-3 Stub Leads, IPak

Vgs (Max) :

±16V

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

29.4 mJ

Current - Continuous Drain (Id) @ 25°C :

12A Ta 76A Tc

Surface Mount :

No

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

152A

Pin Count :

3

JESD-30 Code :

R-PSIP-T3

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

5.8m Ω @ 15A, 10V

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 4.5V

DS Breakdown Voltage-Min :

16V