NTD3808N-1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

5.8m Ω @ 15A, 10V

Drain to Source Voltage (Vdss) :

16V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.0085Ohm

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±16V

Terminal Position :

Single

Mounting Type :

Through Hole

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

12A Ta 76A Tc

Pin Count :

3

Drain Current-Max (Abs) (ID) :

12A

Case Connection :

DRAIN

FET Type :

N-Channel

Power Dissipation-Max :

1.3W Ta 52W Tc

Pbfree Code :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Pulsed Drain Current-Max (IDM) :

152A

DS Breakdown Voltage-Min :

16V

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 4.5V

Qualification Status :

COMMERCIAL

Surface Mount :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1.66pF @ 12V

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Number of Terminations :

3

Terminal Form :

Flat

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Number of Elements :

1

JESD-30 Code :

R-PSSO-F3

Avalanche Energy Rating (Eas) :

29.4 mJ

Terminal Finish :

Tin