NTD30N02T4

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

1000pF @ 20V

Mount :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e0

Power Dissipation-Max :

75W Tj

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Continuous Drain Current (ID) :

30A

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Elements :

1

Drain-source On Resistance-Max :

0.0145Ohm

Current - Continuous Drain (Id) @ 25°C :

30A Ta

Rds On (Max) @ Id, Vgs :

14.5m Ω @ 30A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin/Lead (Sn/Pb)

RoHS Status :

Non-RoHS Compliant

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Vgs (Max) :

±20V

Published :

2005

Peak Reflow Temperature (Cel) :

235

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

50 mJ

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Voltage - Rated DC :

24V

HTS Code :

8541.29.00.95

Lead Free :

Contains Lead

Current Rating :

30A

Pulsed Drain Current-Max (IDM) :

100A

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Reach Compliance Code :

not_compliant

Terminal Position :

Single

FET Type :

N-Channel

Rise Time :

28ns

Packaging :

Tape and Reel (TR)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63