NTD25P03LT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

8 Weeks

Rds On (Max) @ Id, Vgs :

80m Ω @ 25A, 5V

Turn-Off Delay Time :

15 ns

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

15V

Rise Time :

37ns

Pulsed Drain Current-Max (IDM) :

75A

FET Type :

P-Channel

Power Dissipation-Max :

75W Tj

Peak Reflow Temperature (Cel) :

260

Resistance :

51mOhm

Number of Terminations :

2

Number of Pins :

3

Drain to Source Breakdown Voltage :

-30V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Nominal Vgs :

-1.6 V

Transistor Application :

SWITCHING

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

Continuous Drain Current (ID) :

25A

Drive Voltage (Max Rds On,Min Rds On) :

4V 5V

Power Dissipation :

75W

Pbfree Code :

yes

Surface Mount :

yes

Lead Free :

Lead Free

Voltage - Rated DC :

-30V

Vgs (Max) :

±15V

Height :

2.38mm

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

200 mJ

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

25A Ta

Current Rating :

-25A

Turn On Delay Time :

9 ns

Additional Feature :

LOGIC LEVEL COMPATIBLE

REACH SVHC :

No SVHC

Pin Count :

3

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

2V @ 250μA

ECCN Code :

EAR99

Element Configuration :

Single

Length :

6.73mm

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Width :

6.22mm

Contact Plating :

Tin

Published :

2005

Time@Peak Reflow Temperature-Max (s) :

40

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

30V

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1260pF @ 25V

Fall Time (Typ) :

16 ns

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Threshold Voltage :

-1.6V