NTD25P03LT4
- Mfr.Part #
- NTD25P03LT4
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 25A DPAK
- Stock
- 48,721
- In Stock :
- 48,721
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Width :
- 6.22mm
- Mounting Type :
- Surface Mount
- Nominal Vgs :
- -1.6 V
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- P-Channel
- Height :
- 2.38mm
- Threshold Voltage :
- -1.6V
- Gate to Source Voltage (Vgs) :
- 15V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 2
- Case Connection :
- DRAIN
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Pulsed Drain Current-Max (IDM) :
- 75A
- REACH SVHC :
- No SVHC
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Rds On (Max) @ Id, Vgs :
- 80m Ω @ 25A, 5V
- Terminal Form :
- Gull wing
- Power Dissipation :
- 75W
- Drain to Source Breakdown Voltage :
- -30V
- Continuous Drain Current (ID) :
- 25A
- Power Dissipation-Max :
- 75W Tj
- Voltage - Rated DC :
- -30V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Current Rating :
- -25A
- Pin Count :
- 3
- Avalanche Energy Rating (Eas) :
- 200 mJ
- Peak Reflow Temperature (Cel) :
- 260
- Length :
- 6.73mm
- Turn-Off Delay Time :
- 15 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 1260pF @ 25V
- Contact Plating :
- Tin
- Current - Continuous Drain (Id) @ 25°C :
- 25A Ta
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- ECCN Code :
- EAR99
- Rise Time :
- 37ns
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 16 ns
- Drain to Source Voltage (Vdss) :
- 30V
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 5V
- Resistance :
- 51mOhm
- Factory Lead Time :
- 8 Weeks
- JESD-30 Code :
- R-PSSO-G2
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±15V
- Published :
- 2005
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 5V
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Surface Mount :
- yes
- Turn On Delay Time :
- 9 ns
- JESD-609 Code :
- e3
- Datasheets
- NTD25P03LT4

P-Channel Tape & Reel (TR) 80m Ω @ 25A, 5V ±15V 1260pF @ 25V 20nC @ 5V 30V TO-252-3, DPak (2 Leads + Tab), SC-63
NTD25P03LT4G Description
The NTD25P03LT4G is a -30V P-channel Power MOSFET designed for low voltage, high-speed switching applications and to withstand high energy in the avalanche and commutation modes. The source to drain diode recovery time is comparable to a discrete fast recovery diode. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor NTD25P03LT4G is in the TO-252-4 package with 75W power dissipation.
NTD25P03LT4G Features
-
AEC?Q101 Qualified and PPAP Capable
-
Pb?Free and RoHS Compliant
-
Drain?to?Source Voltage: -30v
-
Total Power Dissipation @ TA= 25°C: 75w
-
S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
NTD25P03LT4G Applications
-
PWM Motor Controls
-
Power Supplies
-
Converters
-
Bridge Circuits
-
Motor Drive & Control
-
Power Management
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