NTD25P03L1
- Mfr.Part #
- NTD25P03L1
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 25A IPAK
- Stock
- 44,518
- In Stock :
- 44,518
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Qualification Status :
- Not Qualified
- Pbfree Code :
- No
- Turn-Off Delay Time :
- 15 ns
- Power Dissipation-Max :
- 75W Tj
- Continuous Drain Current (ID) :
- 25A
- Rds On (Max) @ Id, Vgs :
- 80m Ω @ 25A, 5V
- Element Configuration :
- Single
- FET Type :
- P-Channel
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power Dissipation :
- 75W
- JESD-30 Code :
- R-PSIP-T3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Current Rating :
- -25A
- Number of Elements :
- 1
- RoHS Status :
- Non-RoHS Compliant
- Drain-source On Resistance-Max :
- 0.08Ohm
- Published :
- 2006
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 5V
- Terminal Finish :
- Tin/Lead (Sn80Pb20)
- Reach Compliance Code :
- not_compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 5V
- Pulsed Drain Current-Max (IDM) :
- 75A
- Transistor Application :
- SWITCHING
- Drain to Source Breakdown Voltage :
- -30V
- Drain to Source Voltage (Vdss) :
- 30V
- Number of Pins :
- 4
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Number of Terminations :
- 3
- JESD-609 Code :
- e0
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Lead Free :
- Contains Lead
- Current - Continuous Drain (Id) @ 25°C :
- 25A Ta
- Packaging :
- Tube
- Fall Time (Typ) :
- 16 ns
- Vgs (Max) :
- ±15V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1260pF @ 25V
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 day ago)
- Gate to Source Voltage (Vgs) :
- 15V
- Operating Temperature :
- -55°C~150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 37ns
- Surface Mount :
- No
- Transistor Element Material :
- SILICON
- Avalanche Energy Rating (Eas) :
- 200 mJ
- Voltage - Rated DC :
- -30V
- Pin Count :
- 4
- Datasheets
- NTD25P03L1

P-Channel Tube 80m Ω @ 25A, 5V ±15V 1260pF @ 25V 20nC @ 5V 30V TO-251-3 Short Leads, IPak, TO-251AA
NTD25P03L1 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 200 mJ.A device's maximal input capacitance is 1260pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 25A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 15 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 75A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 15V volts.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4V 5V).
NTD25P03L1 Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 25A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 15 ns
based on its rated peak drain current 75A.
a 30V drain to source voltage (Vdss)
NTD25P03L1 Applications
There are a lot of ON Semiconductor
NTD25P03L1 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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