NTD23N03RT4
- Mfr.Part #
- NTD23N03RT4
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 3.8A/17.1A DPAK
- Stock
- 15,282
- In Stock :
- 15,282
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- 240
- Vgs (Max) :
- ±20V
- Number of Terminations :
- 2
- Rds On (Max) @ Id, Vgs :
- 45m Ω @ 6A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 3.76nC @ 4.5V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Surface Mount :
- yes
- Terminal Position :
- Single
- Packaging :
- Tape and Reel (TR)
- DS Breakdown Voltage-Min :
- 25V
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Drain Current-Max (Abs) (ID) :
- 3.8A
- Current - Continuous Drain (Id) @ 25°C :
- 3.8A Ta 17.1A Tc
- Terminal Finish :
- TIN LEAD
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Qualification Status :
- COMMERCIAL
- JESD-30 Code :
- R-PSSO-G2
- FET Type :
- N-Channel
- Number of Elements :
- 1
- JESD-609 Code :
- e0
- Drive Voltage (Max Rds On,Min Rds On) :
- 4V 5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 225pF @ 20V
- Pin Count :
- 3
- Terminal Form :
- Gull wing
- Power Dissipation-Max :
- 1.14W Ta 22.3W Tc
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- Non-RoHS Compliant
- Transistor Application :
- SWITCHING
- Pbfree Code :
- No
- Pulsed Drain Current-Max (IDM) :
- 40A
- Case Connection :
- DRAIN
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain-source On Resistance-Max :
- 0.06Ohm
- Drain to Source Voltage (Vdss) :
- 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Datasheets
- NTD23N03RT4

N-Channel Tape & Reel (TR) 45m Ω @ 6A, 10V ±20V 225pF @ 20V 3.76nC @ 4.5V 25V TO-252-3, DPak (2 Leads + Tab), SC-63
NTD23N03RT4 Overview
A device's maximal input capacitance is 225pF @ 20V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 3.8A, which is the maximum continuous current the device can conduct.In terms of pulsed drain current, it has a maximum of 40A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 25V.This transistor requires a 25V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4V 5V).
NTD23N03RT4 Features
based on its rated peak drain current 40A.
a 25V drain to source voltage (Vdss)
NTD23N03RT4 Applications
There are a lot of Rochester Electronics, LLC
NTD23N03RT4 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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