NTD20P06LT4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

2.38mm

Contact Plating :

Tin

Element Configuration :

Single

JESD-609 Code :

e3

ECCN Code :

EAR99

Published :

2005

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Number of Elements :

1

Length :

6.73mm

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 5V

Vgs(th) (Max) @ Id :

2V @ 250μA

Fall Time (Typ) :

70 ns

Power Dissipation :

65W

Drain to Source Breakdown Voltage :

-60V

Input Capacitance (Ciss) (Max) @ Vds :

1190pF @ 25V

Threshold Voltage :

-1.5V

Rds On (Max) @ Id, Vgs :

150m Ω @ 7.5A, 5V

Pbfree Code :

yes

Nominal Vgs :

-1.5 V

Rise Time :

90ns

Number of Terminations :

2

Drain to Source Voltage (Vdss) :

60V

FET Type :

P-Channel

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

40

Continuous Drain Current (ID) :

15.5A

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

15.5A Ta

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

5V

Factory Lead Time :

8 Weeks

REACH SVHC :

No SVHC

Packaging :

Cut Tape (CT)

Turn On Delay Time :

11 ns

Peak Reflow Temperature (Cel) :

260

Width :

6.22mm

Resistance :

130mOhm

Voltage - Rated DC :

-60V

JESD-30 Code :

R-PSSO-G2

Turn-Off Delay Time :

28 ns

Pulsed Drain Current-Max (IDM) :

50A

Radiation Hardening :

No

Surface Mount :

yes

Current Rating :

-15A

Pin Count :

3

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

65W Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Lead Free :

Lead Free

Number of Pins :

3