NTD20N06T4G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

10.29mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Turn On Delay Time :

9.5 ns

Power Dissipation :

60W

Continuous Drain Current (ID) :

20A

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

ECCN Code :

EAR99

Width :

9.65mm

Number of Elements :

1

Element Configuration :

Single

JESD-609 Code :

e3

Pbfree Code :

yes

Drain to Source Breakdown Voltage :

60V

Operating Temperature :

-55°C~175°C TJ

Current Rating :

20A

JESD-30 Code :

R-PSSO-G2

Factory Lead Time :

8 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Fall Time (Typ) :

37.1 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

1015pF @ 25V

Pin Count :

3

Rds On (Max) @ Id, Vgs :

46m Ω @ 10A, 10V

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

60A

Case Connection :

DRAIN

REACH SVHC :

No SVHC

Contact Plating :

Tin

Vgs (Max) :

±20V

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

40

Number of Terminations :

2

Height :

4.83mm

Resistance :

37.5mOhm

Published :

2005

RoHS Status :

ROHS3 Compliant

Rise Time :

60.5ns

Power Dissipation-Max :

1.88W Ta 60W Tj

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Voltage - Rated DC :

60V

Threshold Voltage :

2.91V

Turn-Off Delay Time :

27.1 ns

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

20A Ta