NTA4151PT1G

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

-20V

Power Dissipation :

301mW

Input Capacitance (Ciss) (Max) @ Vds :

156pF @ 5V

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Package / Case :

SC-75, SOT-416

Power Dissipation-Max :

301mW Tj

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

29 ns

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

0.76A

Rise Time :

8.2ns

Published :

2005

JESD-609 Code :

e3

Continuous Drain Current (ID) :

760mA

Threshold Voltage :

-450mV

Turn On Delay Time :

8 ns

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

2.1nC @ 4.5V

Drain to Source Voltage (Vdss) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Vgs(th) (Max) @ Id :

450mV @ 250μA

Packaging :

Tape and Reel (TR)

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

760mA Tj

Pbfree Code :

yes

Voltage - Rated DC :

-20V

FET Type :

P-Channel

Terminal Position :

Dual

Vgs (Max) :

±6V

Fall Time (Typ) :

8.2 ns

Operating Mode :

ENHANCEMENT MODE

Length :

1.65mm

Rds On (Max) @ Id, Vgs :

360m Ω @ 350mA, 4.5V

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

Gate to Source Voltage (Vgs) :

6V

Number of Elements :

1

Height :

800μm

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Surface Mount :

yes

Resistance :

260mOhm

Radiation Hardening :

No

Width :

900μm

Time@Peak Reflow Temperature-Max (s) :

40

Current Rating :

-760mA

Number of Pins :

3

Factory Lead Time :

6 Weeks