NP88N075EUE-E2-AY

Manufacturer :

Renesas Electronics Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Qualification Status :

Not Qualified

Manufacturer :

NEC Electronics Group

Terminal Finish :

MATTE TIN

Pulsed Drain Current-Max (IDM) :

352 A

Polarity/Channel Type :

N-Channel

ECCN Code :

EAR99

Series :

-

JEDEC-95 Code :

TO-263AB

Drain-source On Resistance-Max :

0.0085 Ω

Number of Terminals :

2

Drain to Source Voltage (Vdss) :

75 V

Reach Compliance Code :

Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Transistor Element Material :

SILICON

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

88A (Tc)

FET Feature :

-

Surface Mount :

yes

JESD-609 Code :

e3

Pin Count :

4

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Product Status :

Obsolete

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Form :

Gull wing

Drive Voltage (Max Rds On, Min Rds On) :

10V

Transistor Application :

SWITCHING

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSSO-G2

Package Shape :

RECTANGULAR

Terminal Position :

Single

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

230 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

12300 pF @ 25 V

Rds On (Max) @ Id, Vgs :

8.5mOhm @ 44A, 10V

Package :

Bulk

Avalanche Energy Rating (Eas) :

450 mJ

Operating Temperature :

175°C

Operating Mode :

ENHANCEMENT MODE

Supplier Device Package :

TO-263-3

DS Breakdown Voltage-Min :

75 V

Power Dissipation (Max) :

1.8W (Ta), 288W (Tc)

HTS Code :

8541.29.00.95