NP84N075KUE-E1-AY

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Rise Time :

21ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

75V

JESD-30 Code :

R-PSSO-G2

Continuous Drain Current (ID) :

84A

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Turn-Off Delay Time :

72 ns

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

8400pF @ 25V

Turn On Delay Time :

30 ns

Mounting Type :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pin Count :

3

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

260A

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

175°C TJ

Vgs (Max) :

±20V

Published :

2007

Fall Time (Typ) :

12 ns

Terminal Finish :

Matte Tin (Sn)

Avalanche Energy Rating (Eas) :

333 mJ

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

12.5m Ω @ 42A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

75V

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Transistor Element Material :

SILICON

Power Dissipation-Max :

1.8W Ta 200W Tc

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

84A Tc

Power Dissipation :

1.8W