NP83P06PDG-E1-AY
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- Mfr.Part #
- NP83P06PDG-E1-AY
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 83A TO263
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Power Dissipation :
- 1.8W
- Case Connection :
- DRAIN
- Mounting Type :
- Surface Mount
- Turn On Delay Time :
- 36 ns
- Published :
- 2007
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- DS Breakdown Voltage-Min :
- 60V
- Terminal Position :
- Single
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Radiation Hardening :
- No
- Current - Continuous Drain (Id) @ 25°C :
- 83A Tc
- Vgs(th) (Max) @ Id :
- 2.5V @ 1mA
- Rise Time :
- 20ns
- Operating Temperature :
- 175°C TJ
- Number of Terminations :
- 2
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 83A
- Gate to Source Voltage (Vgs) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 190nC @ 10V
- Terminal Form :
- Gull wing
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Turn-Off Delay Time :
- 230 ns
- Pin Count :
- 3
- Pulsed Drain Current-Max (IDM) :
- 249A
- Lead Free :
- Lead Free
- Mount :
- Surface Mount
- Fall Time (Typ) :
- 200 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 8.8m Ω @ 41.5A, 10V
- FET Type :
- P-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 10100pF @ 10V
- Avalanche Energy Rating (Eas) :
- 240 mJ
- Vgs (Max) :
- ±20V
- RoHS Status :
- ROHS3 Compliant
- JESD-30 Code :
- R-PSSO-G2
- Drain to Source Voltage (Vdss) :
- 60V
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 1.8W Ta 150W Tc
- Datasheets
- NP83P06PDG-E1-AY
P-Channel Tape & Reel (TR) 8.8m Ω @ 41.5A, 10V ±20V 10100pF @ 10V 190nC @ 10V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NP83P06PDG-E1-AY Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 240 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 10100pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 83A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 230 ns.Peak drain current is 249A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 36 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Normal operation requires that the DS breakdown voltage remain above 60V.For this transistor to work, a voltage 60V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
NP83P06PDG-E1-AY Features
the avalanche energy rating (Eas) is 240 mJ
a continuous drain current (ID) of 83A
the turn-off delay time is 230 ns
based on its rated peak drain current 249A.
a 60V drain to source voltage (Vdss)
NP83P06PDG-E1-AY Applications
There are a lot of Renesas Electronics America
NP83P06PDG-E1-AY applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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