NP82N04PDG-E1-AY

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Terminal Position :

Single

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Configuration :

SINGLE WITH BUILT-IN DIODE

Fall Time (Typ) :

11 ns

Published :

2006

Current - Continuous Drain (Id) @ 25°C :

82A Tc

Mount :

Surface Mount

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 41A, 10V

Operating Temperature :

175°C TJ

Turn-Off Delay Time :

73 ns

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.008Ohm

Case Connection :

DRAIN

Continuous Drain Current (ID) :

82A

Power Dissipation :

1.8W

Turn On Delay Time :

26 ns

DS Breakdown Voltage-Min :

40V

Mounting Type :

Surface Mount

Number of Elements :

1

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Pin Count :

3

Power Dissipation-Max :

1.8W Ta 143W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

MATTE TIN

Rise Time :

68ns

Number of Terminations :

2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-609 Code :

e3

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

9000pF @ 25V

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

40V

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Pulsed Drain Current-Max (IDM) :

328A

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±20V