NP50P04SLG-E1-AY

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Package Shape :

RECTANGULAR

Product Status :

Active

Polarity/Channel Type :

P-Channel

Input Capacitance (Ciss) (Max) @ Vds :

5700 pF @ 10 V

Vgs (Max) :

±20V

Maximum Operating Temperature :

+ 150 C

Manufacturer :

Renesas Electronics

Length :

6.5 mm

Number of Channels :

1 Channel

ECCN Code :

EAR99

FET Type :

P-Channel

Transistor Type :

1 P-Channel

JEDEC-95 Code :

TO-252

Channel Mode :

Enhancement

Avalanche Energy Rating (Eas) :

136 mJ

Terminal Form :

Gull wing

Power Dissipation (Max) :

1.2W (Ta), 84W (Tc)

Rise Time :

15 ns

Reach Compliance Code :

Compliant

HTS Code :

8541.29.00.95

Transistor Polarity :

P-Channel

Brand Name :

Renesas

Product Category :

MOSFET

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Qualification Status :

Not Qualified

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Height :

2.3 mm

Packaging :

Reel

Supplier Device Package :

TO-252 (MP-3ZK)

Mounting Type :

Surface Mount

Brand :

Renesas Electronics

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

40 V

Mounting Style :

SMD/SMT

Number of Terminals :

2

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

150 nC @ 10 V

Power Dissipation-Max (Abs) :

84 W

Operating Temperature :

175°C

Drain Current-Max (Abs) (ID) :

50 A

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Surface Mount :

yes

Drain-source On Resistance-Max :

0.015 Ω

Rds On (Max) @ Id, Vgs :

9.6mOhm @ 25A, 10V

Current - Continuous Drain (Id) @ 25°C :

50A (Ta)

Vgs(th) (Max) @ Id :

2.5V @ 250μA

DS Breakdown Voltage-Min :

40 V

Operating Mode :

ENHANCEMENT MODE

Package :

Tray

Pin Count :

3

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Subcategory :

MOSFETs

Product Type :

MOSFET

FET Feature :

-

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

150 A

Width :

6.1 mm

RoHS :

Details

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Series :

-