NP40N10YDF-E1-AY

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Pin Count :

8

Avalanche Energy Rating (Eas) :

61 mJ

Number of Terminations :

8

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Flat

Additional Feature :

LOGIC LEVEL COMPATIBLE

Rds On (Max) @ Id, Vgs :

25m Ω @ 20A, 10V

Current - Continuous Drain (Id) @ 25°C :

40A Tc

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

100V

Drain to Source Voltage (Vdss) :

100V

Terminal Finish :

Pure Tin (Sn)

Case Connection :

DRAIN

Published :

2013

Operating Temperature :

175°C TJ

Mount :

Surface Mount

Power Dissipation-Max :

1W Ta 120W Tc

Packaging :

Tape and Reel (TR)

Package / Case :

8-PowerLDFN

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Number of Pins :

8

Mounting Type :

Surface Mount

Factory Lead Time :

16 Weeks

Continuous Drain Current (ID) :

40A

Drain-source On Resistance-Max :

0.036Ohm

Gate Charge (Qg) (Max) @ Vgs :

71nC @ 10V

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

3150pF @ 25V

Qualification Status :

Not Qualified

FET Type :

N-Channel