NP35N04YLG-E1-AY

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

175°C

Height :

1.45 mm

Power Dissipation (Max) :

1W (Ta), 77W (Tc)

Power Dissipation-Max (Abs) :

77 W

Pin Count :

8

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Product Type :

MOSFET

Supplier Device Package :

8-HSON

Current - Continuous Drain (Id) @ 25°C :

35A (Tc)

Length :

5.4 mm

Brand :

Renesas Electronics

JESD-30 Code :

R-PDSO-F5

Number of Elements :

1

Product Category :

MOSFET

Transistor Element Material :

SILICON

RoHS :

Details

Package Shape :

RECTANGULAR

Package :

Digi-Reel?

Manufacturer :

Renesas Electronics

Drain Current-Max (Abs) (ID) :

35 A

FET Feature :

-

Drain to Source Voltage (Vdss) :

40 V

Packaging :

Tube

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

40 V

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

9.7mOhm @ 17.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

2850 pF @ 25 V

Width :

5 mm

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

LOGIC LEVEL COMPATIBLE

Package / Case :

8-SMD, Flat Lead Exposed Pad

Feedback Cap-Max (Crss) :

220 pF

Reach Compliance Code :

Compliant

Mounting Type :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

0.015 Ω

Gate Charge (Qg) (Max) @ Vgs :

51 nC @ 10 V

Product Status :

Active

Number of Terminals :

5

Brand Name :

Renesas

Surface Mount :

yes

Subcategory :

MOSFETs

Terminal Position :

Dual

Series :

-

Vgs (Max) :

±20V

Terminal Form :

Flat

Polarity/Channel Type :

N-Channel

Drive Voltage (Max Rds On, Min Rds On) :

5V, 10V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Configuration :

SINGLE WITH BUILT-IN DIODE