NP32N055SHE-E1-AY

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Mfr.Part #
NP32N055SHE-E1-AY
Manufacturer
Intersil (Renesas Electronics Corporation)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 55V 32A TO252
Stock
2,500
In Stock :
2,500

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Manufacturer :
Intersil (Renesas Electronics Corporation)
Product Category :
Transistors - FETs, MOSFETs - Single
Max Operating Temperature :
175 °C
Package :
Bulk
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max) :
1.2W (Ta), 66W (Tc)
FET Feature :
-
Technology :
MOSFET (Metal Oxide)
Radiation Hardening :
No
Rise Time :
11 ns
Input Capacitance :
1.6 nF
Current - Continuous Drain (Id) @ 25°C :
32A (Tc)
Input Capacitance (Ciss) (Max) @ Vds :
1600 pF @ 25 V
Continuous Drain Current (ID) :
32 A
RoHS :
Compliant
Series :
-
Mounting Type :
Surface Mount
Number of Pins :
3
Gate Charge (Qg) (Max) @ Vgs :
32 nC @ 10 V
Drain to Source Voltage (Vdss) :
55 V
Vgs(th) (Max) @ Id :
4V @ 250µA
Mount :
Surface Mount
Rds On (Max) @ Id, Vgs :
25mOhm @ 16A, 10V
Turn-Off Delay Time :
29 ns
Channel Type :
N
Manufacturer :
Renesas Electronics Corporation
Rds On Max :
25 mΩ
Max Power Dissipation :
1.2 W
Min Operating Temperature :
-55 °C
Reach Compliance Code :
Unknown
Packaging :
Tape and Reel
Gate to Source Voltage (Vgs) :
20 V
FET Type :
N-Channel
Factory Lead Time :
1 Week
Supplier Device Package :
TO-252 (MP-3ZK)
Product Status :
Obsolete
Continuous Drain Current Id :
32
Operating Temperature :
175°C (TJ)
Turn-On Delay Time :
16 ns
Datasheets
NP32N055SHE-E1-AY
Introducing Transistors - FETs, MOSFETs - Single Intersil (Renesas Electronics Corporation) NP32N055SHE-E1-AY from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type:Surface Mount, Number of Pins:3, Operating Temperature:175°C (TJ), NP32N055SHE-E1-AY pinout, NP32N055SHE-E1-AY datasheet PDF, NP32N055SHE-E1-AY amp .Beyond Transistors - FETs, MOSFETs - Single Intersil (Renesas Electronics Corporation) NP32N055SHE-E1-AY ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Intersil (Renesas Electronics Corporation) NP32N055SHE-E1-AY


MOSFET (Metal Oxide) N-Channel Tape & Reel 25mOhm @ 16A, 10V 1600 pF @ 25 V 32 nC @ 10 V 55 V TO-252-3, DPak (2 Leads + Tab), SC-63

NP32N055SHE-E1-AY Overview


A device's maximum input capacitance is 1600 pF @ 25 V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 32 A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 29 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20 V.To operate this transistor, you need to apply a 55 V drain to source voltage (Vdss).

NP32N055SHE-E1-AY Features


a continuous drain current (ID) of 32 A
the turn-off delay time is 29 ns
a 55 V drain to source voltage (Vdss)


NP32N055SHE-E1-AY Applications


There are a lot of Renesas
NP32N055SHE-E1-AY applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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