NP160N055TUJ-E1-AY
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- Mfr.Part #
- NP160N055TUJ-E1-AY
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- TO-263-7, D2Pak (6 Leads + Tab)
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 160A TO263-7
- Stock
- 1,600
- In Stock ：
- 1,600
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2010
- Pin Count :
- 7
- Terminal Form :
- Gull wing
- Current - Continuous Drain (Id) @ 25°C :
- 160A Tc
- JESD-30 Code :
- R-PSSO-G6
- Power Dissipation :
- 1.8W
- Lead Free :
- Lead Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Pulsed Drain Current-Max (IDM) :
- 640A
- RoHS Status :
- ROHS3 Compliant
- DS Breakdown Voltage-Min :
- 55V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 10350pF @ 25V
- Terminal Position :
- Single
- Drain-source On Resistance-Max :
- 0.003Ohm
- Turn-Off Delay Time :
- 90 ns
- Rds On (Max) @ Id, Vgs :
- 3m Ω @ 80A, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 20V
- Fall Time (Typ) :
- 10 ns
- Transistor Application :
- SWITCHING
- Operating Temperature :
- 175°C TJ
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drain to Source Voltage (Vdss) :
- 55V
- Power Dissipation-Max :
- 1.8W Ta 250W Tc
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Packaging :
- Tape and Reel (TR)
- Rise Time :
- 20ns
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Case Connection :
- DRAIN
- Mount :
- Surface Mount
- Package / Case :
- TO-263-7, D2Pak (6 Leads + Tab)
- Turn On Delay Time :
- 40 ns
- Continuous Drain Current (ID) :
- 160A
- Number of Terminations :
- 6
- Operating Mode :
- ENHANCEMENT MODE
- Radiation Hardening :
- No
- Datasheets
- NP160N055TUJ-E1-AY
N-Channel Tape & Reel (TR) 3m Ω @ 80A, 10V ±20V 10350pF @ 25V 180nC @ 10V 55V TO-263-7, D2Pak (6 Leads + Tab)
NP160N055TUJ-E1-AY Overview
The maximum input capacitance of this device is 10350pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 160A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 90 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 640A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 40 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 55V.The drain-to-source voltage (Vdss) of this transistor needs to be at 55V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
NP160N055TUJ-E1-AY Features
a continuous drain current (ID) of 160A
the turn-off delay time is 90 ns
based on its rated peak drain current 640A.
a 55V drain to source voltage (Vdss)
NP160N055TUJ-E1-AY Applications
There are a lot of Renesas Electronics America
NP160N055TUJ-E1-AY applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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