NP15P06SLG-E1-AY

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Power Dissipation-Max :

1.2W Ta 30W Tc

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

JEDEC-95 Code :

TO-252AA

Gate to Source Voltage (Vgs) :

20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Rise Time :

5ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2008

Fall Time (Typ) :

65 ns

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

70m Ω @ 7.5A, 10V

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

2.5V @ 250μA

FET Type :

P-Channel

Pin Count :

3

Drain-source On Resistance-Max :

0.095Ohm

Turn On Delay Time :

7 ns

Continuous Drain Current (ID) :

15A

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Case Connection :

DRAIN

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

15A Ta

Lead Free :

Lead Free

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 10V

Terminal Finish :

MATTE TIN

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

45A

Drain to Source Voltage (Vdss) :

60V

Turn-Off Delay Time :

100 ns

Transistor Application :

SWITCHING

Factory Lead Time :

16 Weeks

Packaging :

Tape and Reel (TR)

Power Dissipation :

1.2W

Transistor Element Material :

SILICON

Operating Temperature :

175°C TJ

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

60V

ECCN Code :

EAR99

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V